High-kgatedielectric相关论文
HfTiN film was deposited by co-reactive sputtering and then was annealed in dif-ferent gas ambients at temperature of 65......
Improved Al2O3 Dielectric Properties using Remote Plasma Atomic Layer Deposition with Negative-Biase
Atomic layer deposition (ALD) has been a industry-standard deposition method because it can provide precise thickness co......
Electrical Performance of Organic Field Effect Transistor (OFET) with High-k Gate Oxides under Conse
Organic materials such as pentacene have been attracted due to the low cost,easy process and flexibility.1 These materia......